Single crystal of semiconductive material on crystal of insulating material
US4177321A · kind A · utility
29Cited by
9References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 18, 1978 |
| Grant date | Dec 4, 1979 |
| Priority date | — |
| Expiry date | May 18, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A grown crystal structure comprises a single crystal of semiconductive material having a given lattice constant grown on a spinel crystal substrate having a different lattice constant. A substance is added to one or both of the crystals and has suitable properties relative to the crystals to effectively reduce lattice strains developed in the grown crystal structure due to mismatch of the lattice constants of both crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.