Modified amorphous semiconductors and method of making the same
US4178415A · kind A · utility
15Cited by
1References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 1978 |
| Grant date | Dec 11, 1979 |
| Priority date | — |
| Expiry date | Mar 22, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/8556
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An amorphous semiconductor film includes an amorphous semiconductor host matrix, such as silicon or silicon and oxygen, and a modifier material comprising an alkali metal, such as lithium, incorporated therein by codeposition of the same. The modifier material incorporated in the amorphous host matrix controls the electrical conductivity of the film and other phenomena associated therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.