Energy Conversion Devices, Inc.
🏢 View company profile →430Patents
3Active
430Granted
45Portfolio score
Filing activity: Dec 8, 1971 → Jun 29, 2006 · 3 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5166758A | Electrically erasable phase change memory | Physics | 629 | Expired |
| US6087674A | Memory element with memory material comprising phase-change material and dielectric material | Physics | 572 | Expired |
| US5177567A | Thin-film structure for chalcogenide electrical switching devices and process therefor | Electricity | 558 | Expired |
| US5687112A | Multibit single cell memory element having tapered contact | Physics | 546 | Expired |
| US4646266A | Programmable semiconductor structures and methods for using the same | Emerging Cross-Sectional Technologies | 522 | Expired |
| US5296716A | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom | Physics | 499 | Expired |
| USRE37259E | Multibit single cell memory element having tapered contact | General | 477 | Expired |
| US4499557A | Programmable cell for use in programmable electronic arrays | Emerging Cross-Sectional Technologies | 477 | Expired |
| US5534712A | Electrically erasable memory elements characterized by reduced current and improved thermal stability | Physics | 456 | Expired |
| US5912839A | Universal memory element and method of programming same | Electricity | 431 | Expired |
| US5933365A | Memory element with energy control mechanism | Electricity | 418 | Expired |
| US5825046A | Composite memory material comprising a mixture of phase-change memory material and dielectric material | Physics | 390 | Expired |
| US5536947A | Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom | Physics | 351 | Expired |
| US4599705A | Programmable cell for use in programmable electronic arrays | Physics | 344 | Expired |
| US4845533A | Thin film electrical devices with amorphous carbon electrodes and method of making same | Electricity | 322 | Expired |
| US6141241A | Universal memory element with systems employing same and apparatus and method for reading, writing and programming same | Physics | 320 | Expired |
| US5341328A | Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life | Physics | 312 | Expired |
| US4515165A | Apparatus and method for detecting tumors | Human Necessities | 302 | Expired |
| US5714768A | Second-layer phase change memory array on top of a logic device | Electricity | 296 | Expired |
| US4737379A | Plasma deposited coatings, and low temperature plasma method of making same | Performing Operations; Transporting | 288 | Expired |
| US4226898A | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process | Emerging Cross-Sectional Technologies | 285 | Expired |
| US5359205A | Electrically erasable memory elements characterized by reduced current and improved thermal stability | Physics | 280 | Expired |
| US4775425A | P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same | Emerging Cross-Sectional Technologies | 277 | Expired |
| US4809044A | Thin film overvoltage protection devices | Electricity | 272 | Expired |
| US5534711A | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom | Physics | 270 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.