Process for the deposition of pure semiconductor material

US4179530A · kind A · utility

Assignee

• Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

• Franz Koppl · Altötting, DE
• Helmut Hamster · Burghausen, DE
• Rudolf Griesshammer · Altötting, DE
• Helmut Lorenz · Burghausen, DE

Key dates

• Filing date: Jan 12, 1979
• Grant date: Dec 18, 1979
• Expiry date: Jan 12, 1999

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B25/08
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In a device and process for the deposition of pure semiconductor materials, specially silicon, by thermal decomposition of gaseous compounds of said semiconductor materials on carrier bodies heated to decomposition temperatures, wherein the device consists of a metallic base plate, mounting means and electrical connections thereon for heating the carrier bodies, as well as pipe connections for supply and exhaust of said gaseous compounds, and a bell-shaped cover slipped onto the base plate and forming a gas-tight seal therewith, the improvement that the area of the bell-shaped cover facing the reaction space consists of silver or silverplated steel. A removable heating element is used to preheat the carrier bodies and a cylinder disposed about the bell forms therewith a closed annular cooling chamber.