Process for the preparation of low temperature silicon nitride films by photochemical vapor deposition
US4181751A · kind A · utility
28Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 1978 |
| Grant date | Jan 1, 1980 |
| Priority date | — |
| Expiry date | May 24, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Low temperature photonitride (LTPN) films of excellent quality have been prepared at temperatures ranging from 300.degree. C. downward to 100.degree. C. by a photochemical vapor deposition process, wherein a mixture of silane, ammonia, and hydrazine is caused to react to form Si.sub.3 N.sub.4 films at the substrate interface. These films are suitable for the preparation of silicon nitride passivation layers on solid-state devices, such as metal-oxide semiconductors (MOS) and charge coupled devices to impart enhanced reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.