Semiconductor devices and method of manufacturing the same
US4188707A · kind A · utility
40Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 1977 |
| Grant date | Feb 19, 1980 |
| Priority date | — |
| Expiry date | Jul 11, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/124
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device comprises a semiconductor substrate, a polycrystalline silicon semiconductor body extending upwardly from a portion of the surface of the semiconductor substrate and containing an impurity at a substantially uniform concentration, and a metal electrode disposed on the top surface of the polycrystalline silicon semiconductor body. The metal electrode extends in the lateral direction beyond the periphery of the top surface of the polycrystalline silicon semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.