Semiconductor controlled rectifier having gate grid dividing surrounding zone into two different impurity concentration sections
US4198645A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 27, 1978 |
| Grant date | Apr 15, 1980 |
| Priority date | — |
| Expiry date | Apr 27, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/212
Abstract
A semiconductor controlled rectifier comprises a semiconductor substrate consisting of a first layer having a first conductivity type, a second layer having a second conductivity type and disposed adjacent to the first layer, and a plurality of base regions having the first conductivity type and a higher impurity concentration than the second layer and disposed at predetermined distances from one another within the second layer in at least one direction; a pair of electrodes are kept respectively in contact with the surfaces of the first and the second layer; and a control electrode is kept in contact with the respective base regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.