Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
US4209349A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1978 |
| Grant date | Jun 24, 1980 |
| Priority date | — |
| Expiry date | Nov 3, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a narrow, such as a submicrometer, dimensioned mask opening on a silicon body involving forming a first insulator region having substantially a horizontal surface and a substantially vertical surface. A second insulator is applied on both the horizontal surface and substantially vertical surfaces. The second insulator is composed of a material different from that of the first insulator layer. Reactive ion etching of the second layer removes the horizontal layer and provides a narrow dimensioned second insulator region on the silicon body. The surface of the silicon body is then thermally oxidized. The narrow dimensioned second insulator region is removed to form a narrow dimensioned mask opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.