Electron beam system with character projection capability
US4213053A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 13, 1978 |
| Grant date | Jul 15, 1980 |
| Priority date | — |
| Expiry date | Nov 13, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3007
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam system useful in microfabrication of large scale integrated circuit patterns, particularly those of repetitive nature. The electron beam system includes beam shaping and aperture means disposed between an electron beam source and a target area which permit formation and projection of preselected entire characters or portions thereof into the target area for writing upon a wafer at that location. The pattern cells of such characters may contain as many as 1600 image points which are addressed and projected in parallel, thereby greatly reducing the handling requirements for pattern data as opposed to the techniques utilized in prior art scanning electron beam systems. The system further includes means for correcting for spherical aberration arising in the projection of images comprising a large number of parallel image points.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.