Semiconductor integrated circuit isolated through dielectric material
US4216491A · kind A · utility
7Cited by
10References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1978 |
| Grant date | Aug 5, 1980 |
| Priority date | — |
| Expiry date | Aug 31, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit which includes a plurality of island regions surrounded by a bottom dish-like dielectric layer formed on one side of a support body. A transistor element is formed in the island region, and the collector region of the transistor element is formed more adjacent to one surface of the island region than the other regions. The emitter and base electrodes of the transistor element are respectively led out from the bottom side of the island region to the surface of the support body using interior leads. The method for manufacturing the above-described device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.