Method for determining the compensation density in n-type narrow-gap semiconductors
US4217547A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1979 |
| Grant date | Aug 12, 1980 |
| Priority date | — |
| Expiry date | Feb 13, 1999 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2637
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for determining the compensation density of narrow-gap semiconductors. Photo-excited carriers are generated by uniformily irradiating a sample with a laser pulse of a particular density and pulse width for a particular time length and at a low sample temperature. The laser wavelength is chosen with a photon energy sufficiently high that carriers are excited from the conduction band by normal intrinsic absorption (one-photon absorption). Subsequent to the laser pulse, conductivity-voltage measurements are taken as a function of time during the photo-electron decay. Such measurements are made for different applied source-detector connections on the same sample with identical pulse-time values for each different correction. The sample is then laser-pulsed as before with a magnetic field normal to the sample surface to obtain Hall-voltage measurements. The measurements are averaged for the same time duration and the average of all curves are used in the determination. From the conductivity-voltage measurments and the Hall-voltage measurements, the mobility .mu., and carrier density n, can be determined. The time dependence of .mu. and n measured during the photo-electron decay…
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