Lattice matching measurement device
US4218143A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 22, 1979 |
| Grant date | Aug 19, 1980 |
| Priority date | — |
| Expiry date | Jan 22, 1999 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2656
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of and apparatus for measuring lattice mismatch in a thin multilr semiconductor. By changing the voltage potential across a semiconductor, the different energy gaps present will absorb different frequencies of light. By shining monochromatic light of the frequency in question, a detector can observe the presence of such energy gaps by the absorption of the instant light intensity that will occur. The use of a Schottky barrier permits the light to be reflected back through the device a second time to maximize the absorption characteristics of energy gaps which may be present. Use of a substrate with known energy gaps permits broad band light to be scanned to determine the spectral components absorbed at each of the known energy gaps within the semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.