Sensing amplifier for floating gate memory devices
US4223394A · kind A · utility
71Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1979 |
| Grant date | Sep 16, 1980 |
| Priority date | — |
| Expiry date | Feb 13, 1999 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MOS sensing amplifier for sensing the binary state of floating gate memory devices in a read-only memory is disclosed. The potentials on the column lines in the memory are held to a narrow voltage swing. A pair of "zero" threshold voltage transistors having slightly different threshold voltages are used to maintain the potentials on these lines. A potential developed from the column line is compared with a reference potential developed with a "dummy" biasing network and a "dummy" floating gate memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.