Method of fabrication of semiconductor components having optoelectronic conversion properties

US4229237A · kind A · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Daniel Bensahel · Grenoble, FR
• Jean-Claude Pfister · Meylan, FR
• Louis Revoil · Seyssinet-Pariset, FR

Key dates

• Filing date: Oct 18, 1979
• Grant date: Oct 21, 1980
• Expiry date: Oct 18, 1999

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/919

Abstract

The top surface of a wafer of p-type ZnTe semiconductor material is subjected to double diffusion of an acceptor impurity and of a donor impurity so as to create in the ZnTe on the one hand a compensated region having high resistivity and on the other hand a surface injection region of small thickness, a metallic contact being finally formed on each face of the wafer.