Daniel Bensahel
36Patents
11h-index
23Co-inventors
75Inventor score
Filing activity: May 24, 1979 → Nov 5, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6537370B1 | Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained | Chemistry; Metallurgy | 101 | Expired |
| US6117750A | Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively | Electricity | 85 | Expired |
| US5876796A | Process for selectively depositing a refractory metal silicide on silicon, and silicon wafer metallized using this process | Electricity | 33 | Expired |
| US6953736B2 | Process for transferring a layer of strained semiconductor material | Emerging Cross-Sectional Technologies | 31 | Expired |
| US4725561A | Process for the production of mutually electrically insulated monocrystalline silicon islands using laser recrystallization | Electricity | 26 | Expired |
| US5252181A | Method for cleaning the surface of a substrate with plasma | Chemistry; Metallurgy | 24 | Expired |
| US6429098B1 | Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained | Electricity | 21 | Expired |
| US7534701B2 | Process for transferring a layer of strained semiconductor material | Emerging Cross-Sectional Technologies | 16 | Active |
| US6399502B1 | Process for fabricating a planar heterostructure | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6596555B2 | Forming of quantum dots | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6255149A | Process for restricting interdiffusion in a semiconductor device with composite Si/SiGe gate | Electricity | 11 | Expired |
| US6989570B2 | Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit | Electricity | 11 | Expired |
| US6372581B1 | Process for nitriding the gate oxide layer of a semiconductor device and device obtained | Electricity | 9 | Expired |
| US4263056A | Method for the manufacture of light emitting and/or photodetective diodes | Emerging Cross-Sectional Technologies | 7 | Expired |
| US4678538A | Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects | Chemistry; Metallurgy | 6 | Expired |
| US4229237A | Method of fabrication of semiconductor components having optoelectronic conversion properties | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7129563B2 | Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material | Electricity | 4 | Expired |
| US6690027B1 | Method for making a device comprising layers of planes of quantum dots | Electricity | 4 | Expired |
| US7338883B2 | Process for transferring a layer of strained semiconductor material | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7879679B2 | Electronic component manufacturing method | Electricity | 3 | Active |
| US7033438B2 | Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate | Electricity | 3 | Expired |
| US6551698B1 | Method for treating a silicon substrate, by nitriding, to form a thin insulating layer | Emerging Cross-Sectional Technologies | 1 | Expired |
| US8154091B2 | Integrated electronic circuit including a thin film portion based on hafnium oxide | Electricity | 1 | Active |
| US7279404B2 | Process for fabricating strained layers of silicon or of a silicon/germanium alloy | Emerging Cross-Sectional Technologies | 1 | Expired |
| US6969661B2 | Method for forming a localized region of a material difficult to etch | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.