Narrow band-gap semiconductor CCD imaging device and method of fabrication
US4231149A · kind A · utility
61Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1978 |
| Grant date | Nov 4, 1980 |
| Priority date | — |
| Expiry date | Oct 10, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/022
Abstract
A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation. An opaque field plate over first level insulation is provided for signal channel definition. Second level insulation (ZnS) is substantially thicker than the first level, and is provided with a stepped or sloped geometry under the first level gates. Input and output diodes are provided with MIS guard rings to increase breakdown voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.