Michael A. Kinch
18Patents
7h-index
14Co-inventors
63Inventor score
Filing activity: Oct 10, 1978 → Jul 16, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4231149A | Narrow band-gap semiconductor CCD imaging device and method of fabrication | Electricity | 61 | Expired |
| US5144138A | Infrared detector and method | Electricity | 29 | Expired |
| US7608830B1 | Separate absorption and detection diode for two-color operation | Electricity | 20 | Active |
| US4360732A | Infrared charge transfer device (CTD) system | Electricity | 18 | Expired |
| US4377904A | Method of fabricating a narrow band-gap semiconductor CCD imaging device | Emerging Cross-Sectional Technologies | 13 | Expired |
| US4327291A | Infrared charge injection device imaging system | Electricity | 9 | Expired |
| US7459730B1 | Separate absorption and detection diode for VLWIR | Electricity | 8 | Active |
| US4507160A | Impurity reduction technique for mercury cadmium telluride | Electricity | 7 | Expired |
| US7504672B1 | Separate absorption and detection diode | Electricity | 7 | Expired |
| US4630090A | Mercury cadmium telluride infrared focal plane devices having step insulator and process for making same | Electricity | 3 | Expired |
| US4501625A | Method of producing homogeneously doped HgCdTe which contains a fast diffusing dopant impurity | Chemistry; Metallurgy | 2 | Expired |
| US5534719A | HGCDTE thin film transistor | Emerging Cross-Sectional Technologies | 1 | Expired |
| US5043293A | Dual oxide channel stop for semiconductor devices | Emerging Cross-Sectional Technologies | 1 | Expired |
| US9673347B2 | Minority carrier based HgCdTe infrared detectors and arrays | Emerging Cross-Sectional Technologies | 1 | Active |
| US7612340B2 | Method of operating an avalanche photodiode for reducing gain normalized dark current | Electricity | 0 | Expired |
| US8686471B2 | Minority carrier based HgCdTe infrared detectors and arrays | Emerging Cross-Sectional Technologies | 0 | Active |
| US9112098B2 | Minority carrier based HgCdTe infrared detectors and arrays | Emerging Cross-Sectional Technologies | 0 | Active |
| US5403760A | Method of making a HgCdTe thin film transistor | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.