Solid state devices formed by differential plasma etching of resists
US4232110A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 12, 1979 |
| Grant date | Nov 4, 1980 |
| Priority date | — |
| Expiry date | Mar 12, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of dry etching to form negative resist patterns is described. A host polymer is mixed with one or more monomers capable of being locked into place by electromagnetic radiation and is deposited as a film on a substrate. The film is then selectively irradiated, and then fixed by heating, or vacuum, or both, and etched by means of an oxygen plasma. The rate of removal is higher in the unirradiated region than in the irradiated region, yielding a negative resist pattern. A sensitizer may be added to allow use of various radiation wavelengths. The desirable properties of monomer and host polymer materials are discussed, and specific compositions given of aromatic monomers, silicon containing monomers, and chlorinated polymers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.