Masking technique usable in manufacturing semiconductor devices
US4232439A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 29, 1977 |
| Grant date | Nov 11, 1980 |
| Priority date | — |
| Expiry date | Nov 29, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/143
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor layer different in material from a semiconductor substrate formed on at least one part of the surface of the substrate is partially removed in accordance with a planar configuration forming technique employing irradiation of a radiation such as light, electron beam or X-rays to form a residual layer and ion beams are applied to the upper surface or the substrate at an incidence angle less than 90 degrees so that a non-etching region is formed at the region of the substrate other than the region around and beneath said residual layer according to mutual relationships between the configuration of the residual layer and the incidence angle of the ion beams.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.