VLSI Technology Research Association
50Patents
0Active
50Granted
37Portfolio score
Filing activity: Nov 29, 1977 → Sep 13, 1984
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4314595A | Method of forming nondefective zone in silicon single crystal wafer by two stage-heat treatment | Emerging Cross-Sectional Technologies | 112 | Expired |
| US4376657A | Method of making fault-free surface zone in semiconductor devices by step-wise heat treating | Emerging Cross-Sectional Technologies | 81 | Expired |
| US4523213A | MOS Semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 60 | Expired |
| US4232439A | Masking technique usable in manufacturing semiconductor devices | Emerging Cross-Sectional Technologies | 49 | Expired |
| US4630095A | Packaged semiconductor device structure including getter material for decreasing gas from a protective organic covering | Electricity | 43 | Expired |
| US4292091A | Method of producing semiconductor devices by selective laser irradiation and oxidation | Emerging Cross-Sectional Technologies | 39 | Expired |
| US4504332A | Method of making a bipolar transistor | Emerging Cross-Sectional Technologies | 37 | Expired |
| US4375999A | Method of manufacturing a semiconductor device | Emerging Cross-Sectional Technologies | 36 | Expired |
| US4799009A | Semiconductor testing device | Electricity | 33 | Expired |
| US4314269A | Semiconductor resistor comprising a resistor layer along a side surface | Electricity | 30 | Expired |
| US4317200A | Method and device for testing a sequential circuit divided into a plurality of partitions | Physics | 30 | Expired |
| US4280854A | Method of manufacturing a semiconductor device having conductive and insulating portions formed of a common material utilizing selective oxidation and angled ion-implantation | Emerging Cross-Sectional Technologies | 28 | Expired |
| US4283439A | Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode | Emerging Cross-Sectional Technologies | 22 | Expired |
| US4371423A | Method of manufacturing semiconductor device utilizing a lift-off technique | Electricity | 21 | Expired |
| US4259407A | Radiation-sensitive positive resist | Emerging Cross-Sectional Technologies | 21 | Expired |
| US4377902A | Method of manufacturing semiconductor device using laser beam crystallized poly/amorphous layer | Emerging Cross-Sectional Technologies | 19 | Expired |
| US4291990A | Apparatus for measuring the distribution of irregularities on a mirror surface | Physics | 18 | Expired |
| US4348577A | High selectivity plasma etching method | Electricity | 17 | Expired |
| US4259724A | Device comprising a circuit for making a beam exposure system effectively draw a repetitive pattern | Electricity | 17 | Expired |
| US4292156A | Method of manufacturing semiconductor devices | Emerging Cross-Sectional Technologies | 17 | Expired |
| US4322881A | Method for manufacturing semiconductor memory devices | Electricity | 16 | Expired |
| US4410951A | Positioning apparatus | Physics | 16 | Expired |
| US4219731A | Method for detecting object picture by electron beam | Electricity | 15 | Expired |
| US4487161A | Semiconductor device manufacturing unit | Chemistry; Metallurgy | 15 | Expired |
| US4335505A | Method of manufacturing semiconductor memory device having memory cell elements composed of a transistor and a capacitor | Electricity | 15 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.