Patterned epitaxial regrowth using overlapping pulsed irradiation
US4234358A · kind A · utility
107Cited by
7References
23Claims
0Family size
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Key dates
| Filing date | Apr 5, 1979 |
| Grant date | Nov 18, 1980 |
| Priority date | — |
| Expiry date | Apr 5, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique isdescribed for removing defects and disorder from crystalline layers and the epitaxial regrowth of such layers. The technique involves depositing short term bursts of energy over a limited spatial region of a material thereby annealing the otherwise damaged material and causing it to epitaxially regrow. Subsequent to the short term energy deposition, similar processing is sequentially effected on adjoining and overlapping regions such that a pattern is ultimately "written". This pattern forms a continuous region of essentially single crystal material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.