Method for forming an insulator between layers of conductive material
US4234362A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 3, 1978 |
| Grant date | Nov 18, 1980 |
| Priority date | — |
| Expiry date | Nov 3, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/141
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an insulator between conductive layers, such as highly doped polycrystalline silicon, that involves first forming a conductive layer of, for example, polycrystalline silicon on a silicon body having substantially horizontal and substantially vertical surfaces. A conformal insulator layer is formed on the substantially horizontal and substantially horizontal and vertical surfaces. Reactive ion etching removes the insulator from the horizontal layer and provides a narrow dimensioned insulator on the vertical surfaces silicon body. Another conductive layer, which may be polycrystalline silicon, is formed over the insulator. The vertical layer dimension is adjusted depending upon the original thickness of the conformal insulator layer applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.