Semiconductor transducers employing flexure frames
US4236137A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1979 |
| Grant date | Nov 25, 1980 |
| Priority date | — |
| Expiry date | Mar 19, 1999 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0042
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pressure transducer employs a semiconductor diaphragm with a top surface having located thereon a central boss area of a trapezoidal cross section surrounded or "framed" by a continuous groove of a predetermined width. Piezoresistive sensors are formed on the bottom surface of said diaphragm with a first sensor adjacent the outer edge of said groove and another sensor parallel to said first sensor and adjacent the inner edge of said groove, said groove operative as a stress concentrating area to enable said sensors to provide a relatively large linear output upon application of a force to said diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.