KULITE SEMICONDUCTOR PRODUCTS, INC.
414Patents
242Active
414Granted
53Portfolio score
Filing activity: May 7, 1973 → Oct 10, 2023 · 86 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5955771A | Sensors for use in high vibrational applications and methods for fabricating same | Physics | 135 | Expired |
| US5286671A | Fusion bonding technique for use in fabricating semiconductor devices | Emerging Cross-Sectional Technologies | 132 | Expired |
| US5455445A | Multi-level semiconductor structures having environmentally isolated elements | Emerging Cross-Sectional Technologies | 130 | Expired |
| US4222277A | Media compatible pressure transducer | Physics | 126 | Expired |
| US4192005A | Compensated pressure transducer employing digital processing techniques | Physics | 108 | Expired |
| US3951707A | Method for fabricating glass-backed transducers and glass-backed structures | Electricity | 66 | Expired |
| US4672354A | Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus | Emerging Cross-Sectional Technologies | 62 | Expired |
| US4236137A | Semiconductor transducers employing flexure frames | Physics | 62 | Expired |
| US5543349A | Method for fabricating a beam pressure sensor employing dielectrically isolated resonant beams | Emerging Cross-Sectional Technologies | 57 | Expired |
| US7516675B2 | Joystick sensor apparatus | Physics | 55 | Active |
| US4814856A | Integral transducer structures employing high conductivity surface features | Electricity | 53 | Expired |
| US5614678A | High pressure piezoresistive transducer | Physics | 52 | Expired |
| US5973590A | Ultra thin surface mount wafer sensor structures and methods for fabricating same | Physics | 49 | Expired |
| US4481497A | Transducer structures employing ceramic substrates and diaphragms | Emerging Cross-Sectional Technologies | 49 | Expired |
| US7743672B2 | Multiple axis load cell controller | Physics | 48 | Active |
| US5165283A | High temperature transducers and methods of fabricating the same employing silicon carbide | Emerging Cross-Sectional Technologies | 45 | Expired |
| US5569932A | Porous silicon carbide (SIC) semiconductor device | Emerging Cross-Sectional Technologies | 44 | Expired |
| US5891751A | Hermetically sealed transducers and methods for producing the same | Emerging Cross-Sectional Technologies | 42 | Expired |
| US4483196A | Tubular transducer structures | Physics | 42 | Expired |
| US6330829A | Oil-filled pressure transducer | Physics | 40 | Expired |
| US4406992A | Semiconductor pressure transducer or other product employing layers of single crystal silicon | Physics | 39 | Expired |
| US5939732A | Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof | Electricity | 39 | Expired |
| US7124639B1 | Ultra high temperature hermetically protected wirebonded piezoresistive transducer | Physics | 38 | Expired |
| US6225647A | Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same | Electricity | 38 | Expired |
| US6272928A | Hermetically sealed absolute and differential pressure transducer | Physics | 38 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.