Temperature compensating transistor bias device
US4242598A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1974 |
| Grant date | Dec 30, 1980 |
| Priority date | — |
| Expiry date | Oct 2, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The base-to-emitter bias voltage and current of a high frequency transistor, operating class AB or class A, is derived from a semiconductive bias device consisting of a semiconductive diode junction fed with current from a constant current source to derive a V.sub.BE voltage thereacross which is the bias source voltage. This source voltage is applied across the base-to-emitter junction of the RF transistor via the intermediary of a positive temperature coefficient silicon resistor. The diode and silicon resistor are packaged together for mounting on a heat sink common to the transistor, whereby the transistor is compensated for temperature dependent changes in V.sub.BE and h.sub.FE.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.