Apparatus for treatment with gas plasma
US4245154A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1978 |
| Grant date | Jan 13, 1981 |
| Priority date | — |
| Expiry date | Jun 28, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved apparatus for plasma treatment of silicon semiconductor wafers is proposed in which the end point of the plasma etching or ashing can be readily detected by monitoring with an optical fiberscope penetrating the wall of the plasma reaction chamber with one terminal located inside the plasma reaction chamber with a condenser lens attached thereto and the other terminal located outside the plasma reaction chamber at a distanced position free from the influence of the high frequency electric field inherent to plasma generation which otherwise interferes with the photoelectric recording by the photocell connected to the outer terminal of the optical fiberscope.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.