Method of growing single crystals of alpha aluminum phosphate
US4247358A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1979 |
| Grant date | Jan 27, 1981 |
| Priority date | — |
| Expiry date | Jun 8, 1999 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Single crystals of alpha aluminum phosphate of high crystal perfection are rown from seeded solutions of aluminum orthophosphate and orthophosphoric acid in such a manner as to provide direct visual observation of the crystal growth process and allow precise determination of nucleation and growth kinetics. The method involves sealing the seeded solution in clear quartz ampules, inserting the ampules into a precisely temperature controlled silicone oil bath, increasing the temperature of the silicone oil bath from ambient temperature to approximately 150 degrees C. over a three hour period, programming the temperature of the bath upward at the rate of 0.1 to 2.0 degrees C. per day for periods up to sixty days, and removing the quartz ampules from the silicone oil bath and quickly cooling and removing the crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.