Heterojunction superlattice with potential well depth greater than half the bandgap

US4250515A · kind A · utility

Assignee

• The United States of America as represented by the Secretary of the Army · US

Inventors

• Leo Esaki · Chappaqua, US
• Raphael Tsu · Huntersville, US
• George A. Sai-Halasz · Providence, US
• Leroy L. Chang · Goldens Bridge, US

Key dates

• Filing date: Jun 9, 1978
• Grant date: Feb 10, 1981
• Expiry date: Jun 9, 1998

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8164

Abstract

A superlattice structure is disclosed in which alternating layers of semiductor alloy materials provide a one dimensional spatial periodic variation in band edge energy. A first layer of the superlattice device is an alloy including a first Group III material and a first Group V material, preferably In As, while the second layer is an alloy including a second Group III material different from the first Group III material and a second Group V material different from the first Group V material, and preferably GaSb. In the superlattice structure the valence band of the second alloy is closer to the conduction band of the first alloy than it is to the valence band of the first alloy.