Etching apparatus using a plasma
US4252595A · kind A · utility
32Cited by
15References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1978 |
| Grant date | Feb 24, 1981 |
| Priority date | — |
| Expiry date | Mar 28, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67754
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching device uses a gas activated by a plasma for etching semiconductor elements. The apparatus includes etching chamber in which semiconductor elements are horizontally held by a supporting plate or conveyer and etched. The etching gas introduced from the upper side of the semiconductor element to the down side thereof through holes formed in the supporting plate or conveyer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.