Metallization for integrated circuits
US4258078A · kind A · utility
24Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1979 |
| Grant date | Mar 24, 1981 |
| Priority date | — |
| Expiry date | Dec 21, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49156
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The sharp features that appear on metallization patterns defined by conventional etching processes can be eliminated by instantaneous melting with short laser pulses. Flow is minimized due to the brevity of the lifetime of the molten state but surface tension removes the sharp corners. With polysilicon metallization conductivity is also improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.