Inventor · Sunnyvale, CA, US

Thomas E. Seidel

31Patents
17h-index
37Co-inventors
81Inventor score

Filing activity: Dec 27, 1974 → Feb 3, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US5879459A Vertically-stacked process reactor and cluster tool system for atomic layer deposition Chemistry; Metallurgy 851 Expired
US6503330B1 Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition Chemistry; Metallurgy 463 Expired
US6174377A Processing chamber for atomic layer deposition processes Electricity 353 Expired
US6037664A Dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer Emerging Cross-Sectional Technologies 186 Expired
US6100184A Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer Emerging Cross-Sectional Technologies 148 Expired
US6638859B2 Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition Chemistry; Metallurgy 117 Expired
US6551399B1 Fully integrated process for MIM capacitors using atomic layer deposition Electricity 93 Expired
US6387185B1 Processing chamber for atomic layer deposition processes Electricity 70 Expired
US7981473B2 Transient enhanced atomic layer deposition Chemistry; Metallurgy 57 Expired
US6902624B2 Massively parallel atomic layer deposition/chemical vapor deposition system Chemistry; Metallurgy 49 Expired
US6905547B1 Method and apparatus for flexible atomic layer deposition Chemistry; Metallurgy 46 Expired
US5102816A Staircase sidewall spacer for improved source/drain architecture Electricity 35 Expired
US4653177A Method of making and selectively doping isolation trenches utilized in CMOS devices Electricity 31 Expired
US6720259B2 Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition Electricity 27 Expired
US4258078A Metallization for integrated circuits Emerging Cross-Sectional Technologies 24 Expired
US6897119B1 Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition Chemistry; Metallurgy 19 Expired
US3965453A Piezoresistor effects in semiconductor resistors Electricity 17 Expired
US4364778A Formation of multilayer dopant distributions in a semiconductor Electricity 12 Expired
US4643804A Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices Electricity 10 Expired
US7129580B1 Methods and procedures for engineering of composite conductive films by atomic layer deposition Electricity 8 Expired
US7183649B1 Methods and procedures for engineering of composite conductive films by atomic layer deposition Emerging Cross-Sectional Technologies 3 Expired
US6635570B1 PECVD and CVD processes for WNx deposition Electricity 3 Expired
US6502605B2 Process for the production of a face-to-face carpet fabric Textiles; Paper 3 Expired
US10896823B2 Limited dose atomic layer processes for localizing coatings on non-planar surfaces Physics 2 Active
US7164203B1 Methods and procedures for engineering of composite conductive by atomic layer deposition Emerging Cross-Sectional Technologies 2 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.