Photoresist O-quinone diazide containing composition and resist mask formation process
US4259430A · kind A · utility
21Cited by
15References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1976 |
| Grant date | Mar 31, 1981 |
| Priority date | — |
| Expiry date | Jun 25, 1996 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition includes an alkali soluble resin, a light sensitive diazo compound, and a thermally activated free radical initiator. Resist masks are formed from the above composition by providing a layer of resist on a substrate, exposing the layer patternwise to radiation, removing portions of the layer with a developing solution, and heating the remaining portions of the layer at a temperature which activates the initiator and cross-links the resist to improve the physical characteristics of the resist layer and minimize pattern distortion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.