Vertical field effect transistor with improved gate and channel structure
US4262296A · kind A · utility
52Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1979 |
| Grant date | Apr 14, 1981 |
| Priority date | — |
| Expiry date | Jul 27, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
Abstract
A high frequency field effect transistor of gallium arsenide or other III-V semiconductor compounds has a preferentially etched trapezoidal groove structure in the top surface which creates parallel trapezoidal semiconductor fingers that are wider at the top than at the bottom. Schottky gates or junction gates are fabricated within the grooves surrounding the elongated fingers. The vertical conducting channels between the gates are narrow leading to a high blocking gain, and more contact area is available at the top of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.