Method for the manufacture of light emitting and/or photodetective diodes
US4263056A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 1979 |
| Grant date | Apr 21, 1981 |
| Priority date | — |
| Expiry date | May 24, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/93
Abstract
Method for the manufacture of light emitting and/or photodetective diodes, wherein it comprises the following operations: PA1 (a) starting with a substrate of the material Mg.sub.x Zn.sub.1-x Te; PA1 (b) a means which will make this material conductive is applied thereto; PA1 (c) a layer of thickness x.sub.j is applied to the surface of this substrate and which is compensated in such a way that it has a high resistivity; PA1 (d) ions are implanted with a sufficient energy to create a trapping zone of thickness x.sub.1 in the semi-conductor surface and above it an insulating zone of thickness x.sub.2 with x.sub.1 <x.sub.j ; PA1 (e) conductive contacts are formed on the substrate surface and on its second face. Light emitting and/or photodetective diodes and diode matrixes obtained by this method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.