Passivation of defects in laser annealed semiconductors
US4266986A · kind A · utility
49Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1979 |
| Grant date | May 12, 1981 |
| Priority date | — |
| Expiry date | Nov 29, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The application describes a technique for passivating point defects that are characteristic of laser annealed semiconductors. According to the technique, the laser annealed material is treated with atomic hydrogen to electrically deactivate the defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.