Process for diffusion of aluminum into a semiconductor
US4266990A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1979 |
| Grant date | May 12, 1981 |
| Priority date | — |
| Expiry date | Oct 25, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for the diffusion of aluminum into a semiconductor is disclosed. A piece of elemental aluminum used as a diffusion source is placed on a boat of a refractory metal and heated together with a semiconductor substrate in an evacuated sealed tube for diffusing aluminum into the semiconductor substrate. The semiconductor substrate having aluminum diffused therein is then subjected to heat treatment in an atmosphere of oxygen or nitrogen for a required length of time at a temperature higher than that used for the thermal diffusion. The above process provides the desired diffusion profile of aluminum, and a long lifetime of minority carriers in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.