Naohiro Momma
23Patents
15h-index
60Co-inventors
84Inventor score
Filing activity: Jan 12, 1978 → Jul 16, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4772927A | Thin film FET doped with diffusion inhibitor | Electricity | 142 | Expired |
| US5726488A | Semiconductor device having semiconductor elements formed in a retrograde well structure | Emerging Cross-Sectional Technologies | 129 | Expired |
| US5294811A | Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device | Electricity | 113 | Expired |
| US4879041A | Process for producing ultra-pure water and process for using said ultra-pure water | Emerging Cross-Sectional Technologies | 73 | Expired |
| US6661659B2 | Water cooled inverter | Electricity | 70 | Expired |
| US4876983A | Plasma operation apparatus | Electricity | 59 | Expired |
| US6621701B2 | Water cooled inverter | Electricity | 58 | Expired |
| US4956693A | Semiconductor device | Electricity | 47 | Expired |
| US4862240A | Complementary semiconductor device | Electricity | 37 | Expired |
| US4735916A | Method of fabricating bipolar transistors and insulated gate field effect transistors having doped polycrystalline silicon conductors | Electricity | 34 | Expired |
| US4894801A | Stacked MOS transistor flip-flop memory cell | Electricity | 34 | Expired |
| US6353258B1 | Semiconductor module | Electricity | 28 | Expired |
| US6892582B1 | Semiconductor pressure sensor and pressure sensing device | Performing Operations; Transporting | 27 | Expired |
| US5084355A | Laminar structure comprising organic material and inorganic material | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5883403A | Power semiconductor device | Emerging Cross-Sectional Technologies | 15 | Expired |
| US4963973A | Semiconductor device | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4794445A | Semiconductor device | Electricity | 11 | Expired |
| USRE34158E | Complementary semiconductor device | General | 10 | Expired |
| US4402001A | Semiconductor element capable of withstanding high voltage | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5433788A | Apparatus for plasma treatment using electron cyclotron resonance | Electricity | 6 | Expired |
| US4415385A | Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel | Electricity | 6 | Expired |
| US4266990A | Process for diffusion of aluminum into a semiconductor | Emerging Cross-Sectional Technologies | 3 | Expired |
| US4682199A | High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.