Method for dry-etching aluminum and aluminum alloys
US4267013A · kind A · utility
42Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1979 |
| Grant date | May 12, 1981 |
| Priority date | — |
| Expiry date | Jun 5, 1999 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for dry-etching Al and Al alloys is disclosed, which comprises producing plasma discharges with a mixed gas comprising boron trichloride and freon and/or oxygen incorporated therein and patterning Al or an Al alloy by the produced discharges. In this dry etching method, the etch rate of Al or an Al alloy can be remarkably improved over the etch rate attainable according to the conventional techniques, and the difference of the etch rate between Al or an Al alloy and other material can be remarkably increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.