MIS Device having a metal and insulating layer containing at least one cation-trapping element
US4270136A · kind A · utility
7Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1979 |
| Grant date | May 26, 1981 |
| Priority date | — |
| Expiry date | Mar 23, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal layer of a metal-insulator-semiconductor type semiconductor device, e.g., a metal electrode on an oxide layer covering a semiconductor substrate of an MOS diode or an MOS FET, contains at least one cation-trapping element. The semiconductor substrate with the metal layer and the oxide layer is heated at an elevated temperature to diffuse some of the ions responsible for the cation-trapping element out of the metal layer and into the upper part of the oxide layer. The metal and oxide layers promote the surface passivation of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.