Masaichi Shinoda
5Patents
4h-index
9Co-inventors
39Inventor score
Filing activity: Nov 22, 1977 → Dec 18, 1980
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4298629A | Method for forming a nitride insulating film on a silicon semiconductor substrate surface by direct nitridation | Electricity | 52 | Expired |
| US4343657A | Process for producing a semiconductor device | Electricity | 26 | Expired |
| US4270136A | MIS Device having a metal and insulating layer containing at least one cation-trapping element | Electricity | 7 | Expired |
| US4349395A | Method for producing MOS semiconductor device | Electricity | 6 | Expired |
| US4153906A | Integrated circuit using an insulated gate field effect transistor | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.