Semiconductor integrated circuit device
US4286280A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 6, 1979 |
| Grant date | Aug 25, 1981 |
| Priority date | — |
| Expiry date | Nov 6, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device including a power element and circuit elements for controlling the power element each provided on the same dielectric isolated substrate is disclosed in which the dielectric isolated substrate comprises a semiconductor monocrystalline region extending from one principal surface of the dielectric isolated substrate to the other principal surface, a plurality of semiconductor monocrystalline islands each exposed in a part thereof to the above-mentioned one principal surface, a semiconductor polycrystalline region for supporting the monocrystalline region and the monocrystalline islands, and an insulating film provided among the polycrystalline region and the monocrystalline islands and region; and in which the power element is formed in the monocrystalline region and the circuit elements for controlling the power element are formed in the monocrystalline islands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.