Yoshitaka Sugawara
61Patents
11h-index
41Co-inventors
78Inventor score
Filing activity: Apr 19, 1976 → Dec 8, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5572048A | Voltage-driven type semiconductor device | Electricity | 112 | Expired |
| US6342709B1 | Insulated gate semiconductor device | Electricity | 70 | Expired |
| US4122479A | Optoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor body | Electricity | 41 | Expired |
| US6600192B1 | Vertical field-effect semiconductor device with buried gate region | Electricity | 40 | Expired |
| US7554220B2 | Stable power supplying apparatus | Emerging Cross-Sectional Technologies | 31 | Active |
| US4100562A | Light coupled semiconductor device and method of manufacturing the same | Electricity | 30 | Expired |
| US5631494A | Power semiconductor device with low on-state voltage | Electricity | 28 | Expired |
| US4794441A | Semiconductor switch circuit | Electricity | 26 | Expired |
| US5552625A | Semiconductor device having a semi-insulating layer | Electricity | 25 | Expired |
| US7470960B1 | High-voltage power semiconductor device with body regions of alternating conductivity and decreasing thickness | Electricity | 13 | Expired |
| US4136351A | Photo-coupled semiconductor device | Electricity | 11 | Expired |
| US4286280A | Semiconductor integrated circuit device | Electricity | 11 | Expired |
| US4110781A | Bidirectional grooved thyristor fired by activation of the beveled surfaces | Electricity | 11 | Expired |
| US4419685A | Semiconductor device | Electricity | 10 | Expired |
| US4216487A | Bidirectional light-activated thyristor having substrate optical isolation | Electricity | 7 | Expired |
| US8896084B2 | Semiconductor device | Electricity | 7 | Active |
| US4837458A | Flip-flop circuit | Electricity | 7 | Expired |
| US5608236A | Semiconductor device | Electricity | 7 | Expired |
| US5463243A | Dielectric isolated high voltage semiconductor device | Electricity | 6 | Expired |
| US5977606A | Dielectric isolated high voltage semiconductor device | Electricity | 6 | Expired |
| US4212024A | Solid-state switching circuit employing photon coupling suitable for construction in form of integrated circuit | Electricity | 5 | Expired |
| US7768017B2 | Silicon carbide semiconductor device and manufacturing method therefor | Electricity | 5 | Active |
| US8003736B2 | Silicon-containing compound, curable composition and cured product | Chemistry; Metallurgy | 5 | Active |
| US5719420A | Insulated gate type semiconductor device having built-in protection circuit | Electricity | 4 | Expired |
| US4553125A | High voltage resistance element | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.