Method and apparatus for monitoring etching
US4289188A · kind A · utility
47Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 1980 |
| Grant date | Sep 15, 1981 |
| Priority date | — |
| Expiry date | May 19, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02019
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method and apparatus for monitoring a dry etching process using gas plasma, wherein a ratio of a spectrum intensity which varies depending on the process of the etching process to a spectrum intensity which is independent of the process of the etching process is determined and a resulting signal intensity is monitored. The completion of the etching process can be exactly determined irrespective of variation of the etching conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.