Method of producing semiconductor devices by selective laser irradiation and oxidation
US4292091A · kind A · utility
39Cited by
3References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 25, 1980 |
| Grant date | Sep 29, 1981 |
| Priority date | — |
| Expiry date | Feb 25, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a semiconductor device comprises a step of forming a field isolating oxide layer from an amorphous silicon layer by oxidation at a relatively low temperature. Prior to the oxidizing treatment, a portion of the amorphous silicon layer is recrystallized into a single-crystalline silicon layer by laser irradiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.