Method of manufacturing semiconductor devices
US4292156A · kind A · utility
17Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1979 |
| Grant date | Sep 29, 1981 |
| Priority date | — |
| Expiry date | Feb 28, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/143
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device which has a thick insulating layer on a region for isolating semiconductor circuit elements from one another on a semiconductor substrate. This region of the substrate is selectively etched by using an insulating layer to leave the unetched part of the substrate in a mesa like shape, then, an anti-oxidation masking layer is formed on the sides of the insulating layer and the sides of the mesa shaped part and, after that, the thick insulating layer is formed by an oxidation treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.