Sapphire single crystal substrate for semiconductor devices
US4292373A · kind A · utility
0Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 1980 |
| Grant date | Sep 29, 1981 |
| Priority date | — |
| Expiry date | May 19, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/15
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consists essentially of sapphire (aluminum oxide) and magnesium titanium oxide (MgTiO.sub.3). The invention also provides the aforesaid single crystal substrate in combination with a semiconductor epitaxially grown thereon. The preferred semiconductors are silicon, gallium phosphide, aluminum phosphide and zinc sulphide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.