Photoresist composition containing modified cyclized diene polymers
US4294908A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1980 |
| Grant date | Oct 13, 1981 |
| Priority date | — |
| Expiry date | Apr 2, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0388
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist composition comprising a cyclized product obtained by contacting a conjugated diene polymer or copolymer having unsaturations in the main chain or side chains with a fluorine-containing substituted sulfonic acid compound represented by the formula: EQU CF.sub.n H.sub.3-n SO.sub.3 R or CF.sub.n H.sub.3-n SO.sub.2 X wherein R is hydrogen, alkyl or CF.sub.n H.sub.3-n SO.sub.2, X is halogen, and n is 1, 2 or 3, in an inert solvent, and a photosensitive crosslinking agent soluble in an organic solvent. The resist pattern obtained from said composition has excellent heat resistance. Also, when a silicon oxide film having said resist pattern is etched, the number of pinholes formed is very small.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.