Techniques for impressing a voltage with an electron beam
US4296372A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 23, 1979 |
| Grant date | Oct 20, 1981 |
| Priority date | — |
| Expiry date | May 23, 1999 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/305
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An insulated conductive region, such as a doped semiconductor region in a semiconductor substrate and/or a metal conductor carried insulated on a substrate is subjected to non-destructive testing to determine the electrical integrity of the region. The outer portion of the insulating material may be, for example, a passivating layer and is provided with a metal film which extends over a conductive region to be tested. An electrical potential is applied to the metal film and the structure is subjected to electron beam radiation of sufficient energy level to provide a diffusion cloud which extends from the metal film to the region undergoing tests to form an electrical connection therewith. A voltage measurement taken at the region, with respect to a reference provides an indication of the electrical integrity of the tested region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.