Method of applying thin metal deposits to a substrate
US4297393A · kind A · utility
18Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1980 |
| Grant date | Oct 27, 1981 |
| Priority date | — |
| Expiry date | Feb 28, 2000 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C18/28
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of applying thin metal sensitizing deposits to the exposed silicon areas of a silicon substrate having areas of exposed silicon and silicon oxide, including the steps of immersing the silicon substrate in a basic, aqueous solution containing a metal salt of the metal to be deposited, particularly a nickel, cobalt, or platinum salt, and thereafter reducing the metal ion of the salt to the elemental metal by use of the exposed silicon as the reducing agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.