Mark A. Spak
15Patents
10h-index
21Co-inventors
72Inventor score
Filing activity: May 10, 1978 → Mar 21, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4220706A | Etchant solution containing HF-HnO.sub.3 -H.sub.2 SO.sub.4 -H.sub.2 O.sub.2 | Electricity | 41 | Expired |
| US5019488A | Method of producing an image reversal negative photoresist having a photo-labile blocked imide | Physics | 24 | Expired |
| US4931381A | Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment | Emerging Cross-Sectional Technologies | 21 | Expired |
| US6187506A | Antireflective coating for photoresist compositions | Physics | 20 | Expired |
| US4297393A | Method of applying thin metal deposits to a substrate | Chemistry; Metallurgy | 18 | Expired |
| US4885232A | High temperature post exposure baking treatment for positive photoresist compositions | Physics | 16 | Expired |
| US5922503A | Process for obtaining a lift-off imaging profile | Physics | 15 | Expired |
| US4929536A | Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4174252A | Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5399456A | Image reversal negative working photoresist containing O-quinone diazide and cross-linking compound | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5256522A | Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5324430A | High performance pan composite membranes | Performing Operations; Transporting | 6 | Expired |
| US5217840A | Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6852465B2 | Photoresist composition for imaging thick films | Physics | 3 | Expired |
| US6372414B1 | Lift-off process for patterning fine metal lines | Physics | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.